Precision material modification using miniature-column charged particle beam arrays
US9824859B1 · kind B1 · utility
Inventors
Key dates
| Filing date | Dec 28, 2015 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Apr 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31749
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods, devices and systems for targeted, maskless modification of material on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform direct and knock-on ion implantation, producing patterned material modifications with selected chemical and 3D-structural profiles. The number of required process steps is reduced, reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding individual columns, and support superior, highly-configurable process execution and control. Targeted implantation can be used to prepare the substrate for patterned blanket etch; patterned ALD can be used to prepare the substrate for patterned blanket deposition; neither process requiring photomasks or resist. Arrays of highly configurable beam columns can also be used to perform both positive and negative tone lithography in a single pass.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.