High throughput semiconductor deposition system
US9824890B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 16, 2015 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Dec 18, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A reactor for growing or depositing semiconductor films or devices. The reactor may be designed for inline production of III-V materials grown by hydride vapor phase epitaxy (HVPE). The operating principles of the HVPE reactor can be used to provide a completely or partially inline reactor for many different materials. An exemplary design of the reactor is shown in the attached drawings. In some instances, all or many of the pieces of the reactor formed of quartz, such as welded quartz tubing, while other reactors are made from metal with appropriate corrosion resistant coatings such as quartz or other materials, e.g., corrosion resistant material, or stainless steel tubing or pipes may be used with a corrosion resistant material useful with HVPE-type reactants and gases. Using HVPE in the reactor allows use of lower-cost precursors at higher deposition rates such as in the range of 1 to 5 μm/minute.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.