Substrate support and semiconductor manufacturing apparatus
US9824911B2 · kind B2 · utility
1Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2013 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Sep 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68757
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate support for supporting a substrate when forming a film on a surface of the substrate by chemical vapor deposition. The substrate support includes a graphite material having a recessed portion for accommodating the substrate, a multilayer film on the recessed portion and consisting of a first degassing prevention film of SiC and a sublimation prevention film of TaC or HfC stacked together, and a second degassing prevention film of SiC located on portions of the graphite material other than the recessed portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.