Insulated gate bipolar transistor comprising negative temperature coefficient thermistor

US9825023B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Thomas Basler · Riemerling, DE
• Erich Griebl · Dorfen, DE
• Joachim Mahler · Regensburg, DE
• Daniel Pedone · Munich, DE
• Wolfgang Scholz · Minden, DE
• Philipp Seng · Munich, DE
• Peter Tuerkes · Unterhaching, DE
• Stephan Voss · Munich, DE

Key dates

• Filing date: Oct 12, 2015
• Grant date: Nov 21, 2017
• Expiry date: Oct 12, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/811

Abstract

An embodiment of an IGBT comprises an emitter terminal at a first surface of a semiconductor body. The IGBT further comprises a collector terminal at a second surface of the semiconductor body. A first zone of a first conductivity type is in the semiconductor body between the first and second surfaces. A collector injection structure adjoins the second surface, the collector injection structure being of a second conductivity type and comprising a first part and a second part at a first lateral distance from each other. The IGBT further comprises a negative temperature coefficient thermistor adjoining the first zone in an area between the first and second parts.