Semiconductor device and semiconductor circuit including the semiconductor device with enhanced current-voltage characteristics
US9825026B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 17, 2014 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Jan 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/05
Abstract
A semiconductor device is disclosed. The semiconductor device includes a substrate and a plurality of devices on the substrate, wherein a first device of the devices includes a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer brought together with the first nitride semiconductor layer to form a first heterojunction interface, between the substrate and the first nitride semiconductor layer, a third nitride semiconductor layer brought together with the second nitride semiconductor layer to form a second heterojunction interface, between the substrate and the second nitride semiconductor layer, and a first contact electrically connected to the first and second heterojunction interfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.