Insulated gate bipolar transistor
US9825158B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 10, 2016 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | May 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
An IGBT is provided having a first gate unit having first trench gates with first conductive layers and planar gates with second conductive layers. A second gate unit having a second trench gates may be connected to the emitter electrode, with the first and second conductive layers forming a first shape closed in itself and enclosing the second gate unit. Third trench gates are arranged between a planar gate and the second gate unit such that first and third trench gates are connected and form a second shape closed in itself by which the second gate unit is enclosed. P+ doped bars below the planar gale contact the emitter electrode with each third trench gate separating a bar and a planar gate electrode from the second gate unit, with a p doped base layer separating the second gate unit from the enclosing second shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.