Transistor, circuit, semiconductor device, display device, and electronic device
US9825181B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2016 |
| Grant date | Nov 21, 2017 |
| Priority date | — |
| Expiry date | Dec 9, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G3/2092
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A transistor in which a change in characteristics is small is provided. A circuit, a semiconductor device, a display device, or an electronic device in which a change in characteristics of the transistor is small is provided. The transistor includes an oxide semiconductor; a channel region is formed in the oxide semiconductor; the channel region contains indium, an element M, and zinc; the element M is one or more selected from aluminum, gallium, yttrium, tin, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium; a gate insulator contains silicon and oxygen whose atomic number is 1.5 times or more as large as the atomic number of silicon; the carrier density of the channel region is higher than or equal to 1×109 cm−3 and lower than or equal to 5×1016 cm−3; and the energy gap of the channel region is higher than or equal to 2.7 eV and lower than or equal to 3.1 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.