Capacitive micro-machined transducer and method of manufacturing the same
US9828236B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2013 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Jan 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R31/003
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of manufacturing a capacitive micro- machined transducer (100), in particular a CMUT, the method comprising depositing a first electrode layer (10) on a substrate (1), depositing a first dielectric film (20) on the first electrode layer (10), depositing a sacrificial layer (30) on the first dielectric film (20), the sacrificial layer (30) being removable for forming a cavity (35) of the transducer, depositing a second dielectric film (40) on the sacrificial layer (30), depositing a second electrode layer (50) on the second dielectric film (40), and patterning at least one of the deposited layers and films (10, 20, 30, 40, 50), wherein the depositing steps are performed by Atomic Layer Deposition. The present invention further relates to a capacitive micro-machined transducer (100), in particular a CMUT, manufactured by such method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.