Film-forming composition and method for fabricating film by using the same
US9828402B2 · kind B2 · utility
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4References
12Claims
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Key dates
| Filing date | Sep 16, 2015 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Sep 16, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45553
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A film-forming composition including a 3-intracyclic cyclopentadienyl precursor and dimethyethylamine is useful for Atomic Layer Deposition, and improves viscosity and volatility while maintaining unique features of metal precursors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.