Polishing composition containing ceria abrasive

US9828528B2 · kind B2 · utility

Assignee

• Cabot Microelectronics Corporation · US

Inventors

• Brian Reiss · Woodridge, US
• Dana Sauter Van Ness · Forest Park, US
• Viet Lam · Irvine, US
• Alexander W. Hains · Lakewood, US
• Steven Kraft · Abilene, US
• Renhe Jia · Naperville, US

Key dates

• Filing date: Oct 31, 2016
• Grant date: Nov 28, 2017
• Expiry date: Oct 31, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3212
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.