Method for pattern measurement, method for setting device parameters of charged particle radiation device, and charged particle radiation device
US9831062B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2014 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Jan 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3175
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to provide a method for pattern measurement and a charged particle radiation device in which a pattern formed by using a DSA technique can be very precisely measured and inspected. According to an aspect for achieving the object, a method for pattern measurement or a charged particle radiation device for realizing the measurement is proposed as follows. A charged particle is radiated to a polymer compound used for a self-organization lithography technique, and a specific polymer is considerably contracted as compared to the other polymer among multiple polymers forming the polymer compound. Thereafter, dimensions between multiple edges of the other polymer are measured, based on a signal obtained by scanning a region including the other polymer with the charged particle beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.