Patent · US Active

Method for performing selective etching of a semiconductor material in solution

US9831095B2 · kind B2 · utility

0Cited by

0References

23Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Virginie Loup · Saint-Égrève, FR
Pascal Besson · Gap, FR

Key dates

Filing date	Nov 25, 2016
Grant date	Nov 28, 2017
Priority date	—
Expiry date	Nov 25, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/32105
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for performing selective etching of a semiconductor material in solution having the following successive steps: a) providing a substrate having a layer of amorphous semiconductor material to be etched and a layer of crystalline semiconductor material; b) oxidizing the surfaces of the layers of amorphous semiconductor material and of crystalline semiconductor material so as to form a first protective layer at the surface of the amorphous semiconductor material and a second protective layer at the surface of the crystalline semiconductor material; c) etching the first protective layer and the layer of amorphous semiconductor material with an alkaline etching solution, the etch rate v1 of the first protective layer being higher than the etch rate v2 of the second protective layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.