Patent · US Active

Capacitors with barrier dielectric layers, and methods of formation thereof

US9831171B2 · kind B2 · utility

3Cited by

6References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Bernd Landgraf · St. Martin, AT
Jens Hahn · Dresden, DE

Key dates

Filing date	Nov 12, 2014
Grant date	Nov 28, 2017
Priority date	—
Expiry date	Nov 12, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A device including a first metal feature is disposed in a first insulating layer. A second metal feature is disposed in a second insulating layer and separated from the first metal feature by a portion of a first etch stop liner disposed between the first and the second insulating layers. The second metal feature is capacitively coupled to the first metal feature through the first etch stop liner.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.