Cavity formation in semiconductor devices
US9831192B2 · kind B2 · utility
10Cited by
10References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 2016 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | May 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15313
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Fabricating of radio-frequency (RF) devices involve providing a field-effect transistor (FET) formed over an oxide layer formed on a semiconductor substrate, removing at least part of the semiconductor substrate to expose at least a portion of a backside of the oxide layer, applying a sacrificial material to the backside of the oxide layer, applying an interface material to at least a portion of the backside of the oxide layer, the interface material at least partially covering the sacrificial material, and removing at least a portion of the sacrificial material to form a cavity at least partially covered by the interface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.