Electrostatic discharge (ESD) protection transistor devices and integrated circuits with electrostatic discharge protection transistor devices

US9831236B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Chien-Hsin Lee · Malta, US
• Xiangxiang Lu · Singapore, SG
• Mahadeva Iyer Natarajan · Clifton Park, US

Key dates

• Filing date: Apr 29, 2015
• Grant date: Nov 28, 2017
• Expiry date: Apr 29, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/921

Abstract

An electro-static discharge (ESD) protection transistor device includes a plurality of transistor gates that extend parallel to one another in a first direction and a plurality of source/drain diffusion areas that extend parallel to one another in a second direction perpendicular to the first direction. Each source/drain diffusion area comprises a plurality of source/drain areas disposed between respective ones of the plurality of transistor gates. The ESD protection transistor device further includes a source contact positioned over each source area of the plurality of source areas and a drain contact positioned over each drain area of the plurality of drain areas. With respect to each source/drain diffusion area of the plurality of source/drain diffusion areas, the source contacts are offset from the drain contacts with respect to the first direction.