Complementary logic device using spin-orbit interaction difference and method for manufacturing the same
US9831245B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2017 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Jan 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4738
Abstract
A complementary logic device includes i) a substrate, ii) a first semiconductor device located on the substrate and including a first channel layer, a carrier supply layer for supplying a carrier to the channel layer, and an upper cladding layer and a lower cladding layer respectively located at upper and lower portions of the channel layer, iii) a second semiconductor device located on the substrate and including a structure the same or similar to that of the first semiconductor device, iv) a source electrode located on the two semiconductors and made of a ferromagnetic body, v) a drain electrode located on the two semiconductors and made of a ferromagnetic body, and vi) a gate electrode located on the two semiconductors and located between the two electrodes so that a gate voltage is applied thereto to control a spin of electrons passing through the two channel layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.