Semiconductor structure and associated fabricating method
US9831340B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 5, 2016 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Feb 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure is disclosed. The semiconductor structure includes: a substrate of a first conductivity; a first region of the first conductivity formed in the substrate; a second region of the first conductivity formed in the first region, wherein the second region has a higher doping density than the first region; a source region of a second conductivity formed in the second region; a drain region of the second conductivity formed in the substrate; a pickup region of the first conductivity formed in the second region and adjacent to the source region; and a resist protective oxide (RPO) layer formed on a top surface of the second region. An associated fabricating method is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.