Semiconductor device having NFET structure and method of fabricating the same
US9831343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2015 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Dec 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having n-type field-effect-transistor (NFET) structure and a method of fabricating the same are provided. The NFET structure of the semiconductor device includes a silicon substrate, at least one source/drain portion and a cap layer. The source/drain portion can be disposed within the silicon substrate, and the source/drain portion comprises at least one n-type dopant-containing portion. The cap layer overlies and covers the source/drain portion, and the cap layer includes silicon carbide (SiC) or silicon germanium (SiGe) with relatively low germanium concentration, thereby preventing n-type dopants in the at least one n-type dopant-containing portion of the source/drain portion from being degraded after sequent thermal and cleaning processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.