Photodetector with tapered waveguide structure
US9831374B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2013 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Dec 20, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/52
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Techniques and mechanisms for providing efficient direction of light to a photodetector with a tapered waveguide structure. In an embodiment, a taper structure of a semiconductor device comprises a substantially single crystalline silicon. A buried oxide underlies and adjoins the monocrystalline silicon of the taper structure, and a polycrystalline Si is disposed under the buried oxide. During operation of the semiconductor device light is redirected in the taper structure and received via a first side of a Germanium photodetector. In another embodiment, one or more mirror structures positioned on a far side of the Germanium photodetector may provide for a portion of the light to be reflected back to the Germanium photodetector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.