Half bridge driver circuits
US9831867B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2017 |
| Grant date | Nov 28, 2017 |
| Priority date | — |
| Expiry date | Feb 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0072
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A half bridge GaN circuit is disclosed. The circuit includes a low side circuit, which has a low side switch, a low side switch driver configured to drive the low side switch, a first level shift circuit configured to receive a first level shift signal, and a second level shift circuit configured to generate a second level shift signal. The half bridge GaN circuit also includes a high side circuit, which has a high side switch configured to be selectively conductive according to a voltage level of a received high side switch signal, and a high side switch driver configured to generate the high side switch signal in response to the level shift signals. A transition in the voltage of the high side switch signal causes the high side switch driver to prevent additional transitions of the voltage level of the high side switch signal for a period of time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.