Structure and formation method of semiconductor device structure
US9834435B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2016 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Nov 29, 2036 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/036
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Structures and formation methods of a semiconductor device structure are provided. A semiconductor device structure includes a semiconductor substrate including a cavity and a movable feature in the cavity. The semiconductor device structure also includes a cap substrate bonded to the semiconductor substrate to seal the cavity. There is an interface between the cap substrate and the semiconductor substrate. The semiconductor device structure further includes a sealing feature embedded in the semiconductor substrate and surrounding the cavity. The sealing feature extends across the interface and penetrates through the cap substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.