Polylactide/silicon-containing block copolymers for nanolithography
US9834700B2 · kind B2 · utility
2Cited by
1References
22Claims
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Key dates
| Filing date | Aug 17, 2015 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Aug 17, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31504
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention includes a diblock copolymer system that self-assembles at very low molecular weights to form very small features. In one embodiment, one polymer in the block copolymer contains silicon, and the other polymer is a polylactide. In one embodiment, the block copolymer is synthesized by a combination of anionic and ring opening polymerization reactions. In one embodiment, the purpose of this block copolymer is to form nanoporous materials that can be used as etch masks in lithographic patterning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.