Polishing slurry and method of polishing substrate using the same
US9834705B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 18, 2016 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Feb 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
Provided are a slurry for polishing tungsten and a method of polishing a substrate. The slurry according to an exemplary embodiment includes an abrasive configured to perform polishing and include particles having a positive zeta potential, a dispersant configure to disperse the abrasive, an oxidizer configured to oxidize a surface of the tungsten, a catalyst configured to promote oxidation of the tungsten, and a selectivity control agent configured to control a polishing selectivity and include an organic acid containing a carboxyl group. According to the slurry of the exemplary embodiment, a polishing selectivity between the tungsten and the insulation layer may be improved by suppressing a polishing rate of the insulation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.