Methods of manufacturing semiconductor devices
US9837272B2 · kind B2 · utility
2Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2016 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Apr 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.