Semiconductor die with a metal via
US9837411B2 · kind B2 · utility
0Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2015 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Jul 14, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor die that may include a substrate; an epitaxial layer; a metal layer; a first transistor; and a metal via that surrounds the first transistor, extends between the metal layer and the substrate, and penetrates the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.