S-contact for SOI

US9837412B2 · kind B2 · utility

Assignee

• Peregrine Semiconductor Corporation · US

Inventors

• Befruz Tasbas · San Diego, US
• Simon Edward Willard · Irvine, US
• Alain Duvallet · San Diego, US
• Sinan Goktepeli · San Diego, US

Key dates

• Filing date: Dec 9, 2015
• Grant date: Dec 5, 2017
• Expiry date: Dec 9, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

Systems, methods, and apparatus for an improved protection from charge injection into layers of a device using resistive structures are described. Such resistive structures, named s-contacts, can be made using simpler fabrication methods and less fabrication steps. In a case of metal-oxide-semiconductor (MOS) field effect transistors (FETs), s-contacts can be made with direct connection, or resistive connection, to all regions of the transistors, including the source region, the drain region and the gate.