Substrate contact land for an MOS transistor in an SOI substrate, in particular an FDSOI substrate
US9837413B2 · kind B2 · utility
4Cited by
6References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2016 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Feb 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate contact land for a first MOS transistor is produced in and on an active zone of a substrate of silicon on insulator type using a second MOS transistor without any PN junction that is also provided in the active zone. A contact land on at least one of a source or drain region of the second MOS transistor forms the substrate contact land.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.