Method for manufacturing semiconductor fin structure with extending gate structure
US9837510B2 · kind B2 · utility
20Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2016 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Oct 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a fin structure formed over the substrate. The semiconductor structure further includes an isolation structure formed around the fin structure and a gate structure formed across the fin structure. In addition, the gate structure includes a first portion formed over the fin structure and a second portion formed over the isolation structure, and the second portion of the gate structure includes an extending portion extending into the isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.