Use of centrosymmetric Mott insulators in a resistive switched memory for storing data
US9837607B2 · kind B2 · utility
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Key dates
| Filing date | Apr 10, 2013 |
| Grant date | Dec 5, 2017 |
| Priority date | — |
| Expiry date | Apr 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A material belonging to the family of centrosymmetric Mott insulators is used as an active material in a resistively switched memory for storing data. The material is placed between two electrical electrodes, by virtue of which an electric field of a preset value is applied in order to form, by way of an electron avalanche effect, an elementary information cell that has at least two logic states.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.