Method of improving ion beam quality in a non-mass-analyzed ion implantation system
US9840772B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2017 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | May 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/022
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of processing a workpiece is disclosed, where the plasma chamber is first coated using a conditioning gas and optionally, a co-gas. The conditioning gas, which is disposed within a conditioning gas container may comprise a hydride of the desired dopant species and a filler gas, where the filler gas is a hydride of a Group 4 or Group 5 element. The remainder of the conditioning gas container may comprise hydrogen gas. Following this conditioning process, a feedgas, which comprises fluorine and the desired dopant species, is introduced to the plasma chamber and ionized. Ions are then extracted from the plasma chamber and accelerated toward the workpiece, where they are implanted without being first mass analyzed. In some embodiments, the desired dopant species may be boron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.