Highly transparent aluminum nitride single crystalline layers and devices made therefrom
US9840790B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 23, 2012 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | May 4, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/26
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention provides highly transparent single crystalline AlN layers as device substrates for light emitting diodes in order to improve the output and operational degradation of light emitting devices. The highly transparent single crystalline AlN layers have a refractive index in the a-axis direction in the range of 2.250 to 2.400 and an absorption coefficient less than or equal to 15 cm-1 at a wavelength of 265 nm. The invention also provides a method for growing highly transparent single crystalline AlN layers, the method including the steps of maintaining the amount of Al contained in wall deposits formed in a flow channel of a reactor at a level lower than or equal to 30% of the total amount of aluminum fed into the reactor, and maintaining the wall temperature in the flow channel at less than or equal to 1200° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.