Magnetic memory device and method of fabricating the same
US9842637B2 · kind B2 · utility
4Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2016 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Oct 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device and a method of fabricating the same are provided. The method includes forming a first magnetic layer on a substrate, forming a tunnel barrier layer on the first magnetic layer, and forming a second magnetic layer on the tunnel barrier layer. The forming of the tunnel barrier layer includes forming a first metal oxide layer on the first magnetic layer, forming a first metal layer on the first metal oxide layer, forming a second metal oxide layer on the first metal layer, and performing a first thermal treatment process to oxidize at least a portion of the first metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.