Semiconductor device structure and method for forming the same
US9842765B2 · kind B2 · utility
0Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2015 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Oct 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a dielectric layer over the substrate. The dielectric layer has a trench. The semiconductor device structure includes a conductive line in the trench. The conductive line has a first end portion and a second end portion. The first end portion faces the substrate. The second end portion faces away from the substrate. A first width of the first end portion is greater than a second width of the second end portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.