Method of etching
US9842772B2 · kind B2 · utility
0Cited by
1References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 2015 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Apr 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is for etching a semiconductor substrate to reveal one or more features buried in the substrate. The method includes performing a first etch step using a plasma in which a bias power is applied to the substrate to produce an electrical bias, performing a second etch step without a bias power or with a bias power which is lower than the bias power applied during the first etch step, and alternately repeating the first and second etch steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.