Semiconductor devices including gaps between conductive patterns
US9842803B2 · kind B2 · utility
3Cited by
13References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2016 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Dec 12, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices are provided. A semiconductor device includes gaps between conductive patterns. Moreover, the semiconductor device includes a permeable layer on the conductive patterns. Methods of fabricating semiconductor devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.