Patent · US Active

Semiconductor device and method of manufacture

US9842826B2 · kind B2 · utility

13Cited by
11References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 15, 2015
Grant dateDec 12, 2017
Priority date
Expiry dateJul 15, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/181
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An integrated fan out package on package architecture is utilized along with a reference via in order to provide a reference voltage that extends through the InFO-POP architecture. If desired, the reference via may be exposed and then connected to a shield coating that can be used to shield the InFO-POP architecture. The reference via may be exposed by exposing either a top surface or a sidewall of the reference via using one or more singulation processes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.