High density nanosheet diodes
US9842835B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2016 |
| Grant date | Dec 12, 2017 |
| Priority date | — |
| Expiry date | Oct 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
Abstract
Embodiments are directed to a method for forming a semiconductor structure by depositing a stack of alternating layers of two materials over a substrate and defining field-effect transistor and diode regions. The method further includes depositing a mask, where the mask covers only the field-effect transistor region while leaving the diode region uncovered. The method further includes doping the material in the diode region with a dopant, implanting epitaxial material with another dopant to form PN junctions, stripping the mask from the structure, forming a metal gate conductor over the field-effect transistor region, and depositing a metal over the substrate to create terminals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.