Method for producing a semiconductor layer sequence

US9842964B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Joachim Hertkorn · Neukirchen, DE
• Werner Bergbauer · Windberg, DE

Key dates

• Filing date: Apr 15, 2015
• Grant date: Dec 12, 2017
• Expiry date: Apr 15, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/0217
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a semiconductor layer sequence is disclosed. In an embodiment the includes growing a first nitridic semiconductor layer at the growth side of a growth substrate, growing a second nitridic semiconductor layer having at least one opening on the first nitridic semiconductor layer, removing at least pail of the first nitridic semiconductor layer through the at least one opening in the second nitridic semiconductor layer, growing a third nitridic semiconductor layer on the second nitridic semiconductor layer, wherein the third nitridic semiconductor layer covers the at least one opening at least in places in such a way that at least one cavity free of a semiconductor material is present between the growth substrate and a subsequent semiconductor layers and removing the growth substrate.