Semiconductor inspection device including a counter electrode with adjustable potentials used to obtain images for detection of defects, and inspection method using charged particle beam
US9846133B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2012 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Nov 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, the device applies a positive or negative voltage to the electrode and obtains images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. A first image is obtained using the EH and positive potential conditions. A second image is obtained using the EL and negative potential conditions. A third image is obtained at the same position as the second image, and by using the EL and positive potential conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.