Methods for forming a device having a capped through-substrate via structure
US9847256B2 · kind B2 · utility
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4References
20Claims
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Key dates
| Filing date | Dec 5, 2016 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Dec 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device including a first dielectric layer on a semiconductor substrate, a gate electrode formed in the first dielectric layer, and a through-substrate via (TSV) structure penetrating the first dielectric layer and extending into the semiconductor substrate. The TSV structure includes a conductive layer, a diffusion barrier layer surrounding the conductive layer and an isolation layer surrounding the diffusion barrier layer. A capping layer including cobalt is formed on the top surface of the conductive layer of the TSV structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.