Patent · US Active

Plasma dicing with blade saw patterned underside mask

US9847258B2 · kind B2 · utility

13Cited by

1References

14Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Thomas Rohleder · Hamburg, DE
Hartmut Buenning · Norderstedt, DE
Guido Albermann · Hamburg, DE
Sascha Moeller · Hamburg, DE
Martin Lapke · Hamburg, DE

Key dates

Filing date	Sep 30, 2015
Grant date	Dec 19, 2017
Priority date	—
Expiry date	Oct 20, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Consistent with an example embodiment, there is a method for preparing an integrated circuit (IC) device from a wafer substrate, the wafer substrate having a top-side surface with a plurality of active device die separated by saw lanes and an opposite under-side surface. The method comprises coating the under-side surface of the wafer substrate with a resilient coating, locating the position of the saw lanes from the underside surface, blade dicing trenches in the resilient material to expose under-side bulk material in the position of saw lanes, and plasma etching through the trenches to remove the exposed under-side bulk material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.