Electronic device and method for fabricating the same
US9847297B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 6, 2015 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Dec 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This patent document provides an electronic device including a semiconductor memory that can simplify a fabrication process and improve characteristics of a variable resistance element, and a method for fabricating the same. In one aspect, an electronic device including a semiconductor memory is provided, wherein the semiconductor memory includes: a substrate; a variable resistance element formed over the substrate and exhibiting different resistance states to store data; an interlayer insulating layer formed over the substrate to surround at least a portion of the variable resistance element; an upper electrode contact formed over the variable resistance element to penetrate a portion of the interlayer insulating layer and be in contact with the variable resistance element; and a metal wiring formed over the interlayer insulating layer, and configured to include a stacked structure of a tungsten layer and a barrier layer, wherein the barrier layer is in contact with the upper electrode contact and includes tungsten, boron and iridium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.