Wafer surface conditioning for stability in fab environment
US9847302B2 · kind B2 · utility
0Cited by
6References
18Claims
0Family size
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Key dates
| Filing date | Aug 23, 2013 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Aug 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Hydroxyl moieties are formed on a surface over a semiconductor substrate. The surfaces are silylized to replace the hydroxyl groups with silyl ether groups, the silyl ether groups being of the form: —OSiR1R2R3, where R1, R2, and R3 are each hydrocarbyl groups comprising at least one carbon atom. Silylation protects the wafers from forming defects through hydrolysis while the wafers are being transported or stored under ambient conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.