Semiconductor device with a radiation sensing region and method for forming the same
US9847363B2 · kind B2 · utility
4Cited by
2References
20Claims
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Key dates
| Filing date | Jun 2, 2016 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Jun 2, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.