Resistive memory devices with a multi-component electrode
US9847378B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2014 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Apr 30, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/73
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive memory device includes a conductor and a resistive memory stack in contact with the conductor. The resistive memory stack includes a multi-component electrode and a switching region. The multi-component electrode includes a base electrode having a surface, and an inert material electrode on the base electrode surface in a form of i) a thin layer, or ii) discontinuous nano-islands. A switching region is in contact with the conductor and with the inert material electrode when the inert material electrode is in the form of the thin layer; or the switching region is in contact with the conductor, with the inert material electrode, and with an oxidized portion of the base electrode when the inert material electrode is in the form of the discontinuous nano-islands.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.