Patent · US Active

Semiconductor device including a contact structure directly adjoining a mesa section and a field electrode

US9847395B2 · kind B2 · utility

2Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

David Laforet · Villach, AT
Elisabeth Schwarz · Bodenwerder, DE
Beate Weissnicht · Villach, AT

Key dates

Filing date	Jul 1, 2016
Grant date	Dec 19, 2017
Priority date	—
Expiry date	Jul 1, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/519
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a gate structure that extends from a first surface into a semiconductor portion and that surrounds a transistor section of the semiconductor portion. A field plate structure includes a field electrode and extends from the first surface into the transistor section. A mesa section of the semiconductor portion separates the field plate structure and the gate structure. A contact structure includes a first portion directly adjoining the mesa section and a second portion directly adjoining the field electrode. The first and second portions include stripes and are directly connected to each other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.