Fluctuation resistant FinFET
US9847404B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 11, 2013 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Oct 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This improved, fluctuation resistant FinFET, with a doped core and lightly doped epitaxial channel region between that core and the gate structure, is confined to the active-gate span because it is based on a channel structure having a limited extent. The improved structure is capable of reducing FinFET random doping fluctuations when doping is used to control threshold voltage, and the channel structure reduces fluctuations attributable to doping-related variations in effective channel length. Further, the transistor design affords better source and drain conductance when compared to prior art FinFETs. Two representative embodiments of the key structure are described in detail.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.