Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage
US9847407B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2012 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Sep 17, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
Disclosed are structures and methods related to metallization of a doped gallium arsenide (GaAs) layer. In some embodiments, such metallization can include a tantalum nitride (TaN) layer formed on the doped GaAs layer, and a metal layer formed on the TaN layer. Such a combination can yield a Schottky diode having a low turn-on voltage, with the metal layer acting as an anode and an electrical contact connected to the doped GaAs layer acting as a cathode. Such a Schottky diode can be utilized in applications such as radio-frequency (RF) power detection, reference-voltage generation using a clamp diode, and photoelectric conversion. In some embodiments, the low turn-on Schottky diode can be fabricated utilizing heterojunction bipolar transistor (HBT) processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.