Semiconductor device and method for manufacturing semiconductor device having a step provided in a lateral surface of a trench formed in a surface of a semiconductor substrate
US9847414B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2015 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Dec 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device provided herein includes a trench in which a gate insulating layer (GIL) and a gate electrode are located. A step is provided in a lateral surface of the trench. The step surface descends toward a center of the trench. First and second regions are of a first conductivity type. A body region, a lateral region and a bottom region are of a second conductivity type. The first region, a body region, and the second region are in contact with the GIL at the upper lateral surface of the trench. The second region is in contact with the GIL at the lower lateral surface of the trench. A lateral region is in contact with the GIL at the lower lateral surface. A bottom region is in contact with the GIL at the bottom surface of the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.