Semiconductor device and method for fabricating the same
US9847423B1 · kind B1 · utility
3Cited by
1References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 5, 2017 |
| Grant date | Dec 19, 2017 |
| Priority date | — |
| Expiry date | Apr 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a shallow trench isolation (STI) around the fin-shaped structure; removing part of the fin-shaped structure and part of the STI to form a first trench and removing part of the STI adjacent to the fin-shaped structure to form a second trench; and forming a dielectric layer into the first trench and the second trench to form a first single diffusion break (SDB) and a second single diffusion break.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.